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InAs-GaSb QUANTUM WELL RESONANT TUNNEL DIODE

IP.com Disclosure Number: IPCOM000034837D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Esaki, L Mendez, EE Munekata, H [+details]

Abstract

A diode is constructed of three thin layers of GaSb (the thickness, L1), InAs (W) and GaSb (L2), sandwiched between two n+ InAs electrodes. The energy diagram at zero bias for the structure is shown in Fig. 1, where the hatched area indicates the energy bandgap at each semiconductor. The bottom of the InAs conduction band edge lies below the top of the GaSb valence band edge at the interface. (Image Omitted) The middle InAs layer is made sufficiently thin so as to set the ground bound state Eo above the Fermi energy Ef . The threshold thickness, which satisfies this condition, is 60Ao . The thicknesses L1 and L2 for the GaSb layers should be in the range of 50Ao to 150Ao, depending on the requirement of the tunneling current-density. Figs.