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Quantum Switch Disclosure Number: IPCOM000034838D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27

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Chang, LL Heiblum, M Mendez, EE [+details]


A very fast electrical switch can be obtained by the drastic change in the two-terminal magnetoresistance of a high mobility 2D electron gas. At low temperatures, T & 4 K, the two-terminal resistance of a high-mobility 2D electron gas can be extremely high (R>/ML) at certain values of a magnetic field applied perpendicularly to the 2D gas. Figs. 1, 2 and 3 show the performance, the cross-sectional and top views of the device, respectively. The sharp rise in resistance occurs at critical fields for which the Fermi energy is between Landau levels (or spin-split Landau levels). This effect is employed to make a quantum-switch device. The device structure would be a GaAs-GaA1As modulation-doped heterostructure grown on a semi-insulating substrate, shown in Fig. 2.