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Self-Aligned Gate Mosfets With Low-Temperature Gate Material

IP.com Disclosure Number: IPCOM000034878D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Nguyen, TN Sai-Halasz, GA [+details]

Abstract

Self-aligned MOSFET transistors are widely used in current integrated circuits because of their high speed and high density advantages. The fabrication of such transistors requires that the gate be patterned early in the processing cycle to act as a mask for source and drain implants and that it is compatible to all subsequent processing steps. This process compatibility condition imposes a host of difficult requirements on the gate material, such as high melting temperature, good thermal and chemical stability with gate insulator, and low diffusivity in the gate insulator. In addition, the gate material has to meet important electrical requirements, such as low resistivity and suitable work function.