Silicide Interface Monitor
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-28
A structure is disclosed for providing direct measurement of silicide-to-diffusion (n+ or p+) interface resistance. The series resistance of field-effect transistors (FETs) becomes increasingly important as device lengths are shortened. A significant component of the FET series resistance (RE) is contributed by the interface between the metal silicide, e.g., titanium silicide (TiSi2) and the source/drain silicon (n+/p+) in technologies with silicide source/drains. Current techniques allow a measurement of the total series resistance and are incapable of separating the interface component (RI) from the component due to the resistance of the doped silicon. This limitation imposes interpretation difficulties on experiments which change both components, e.g.