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Low Stress Dielectric Coatings for Copper Parts

IP.com Disclosure Number: IPCOM000035006D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Cuomo, JJ Guarnieri, RC Jahnes, CV Speidell, JL Yee, DS [+details]

Abstract

Disclosed is a process for depositing high thermal conductivity dielectrics onto metallic substrates such as copper. Applications require that the dielectric layer be pinhole and crack free with low stress and good adhesion to the copper. A dielectric having suitable material properties, the process for depositing such a dielectric, as well as the controlling parameters that determine the final properties are described herein. Amorphous silicon nitride (Si3N4) is used because of its high thermal conductivity (35 W/m-K), high electrical resistivity, and dielectric breakdown strength. Crack-free films 5.0mm thick can be deposited with good adhesion to copper using a plasma-enhanced chemical vapor deposition (PECVD) process.