Browse Prior Art Database

Photo-Gate Fet

IP.com Disclosure Number: IPCOM000035082D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Chappell, TI Woodall, JM [+details]

Abstract

A photovoltaic detector is integrated into the gate of a GaAs MESFET. In order to get the needed depletion beneath the gate, surface states are intentionally created during the growth step for the photo-gate such as by molecular beam epitaxy (MBE) by allowing some oxygen into the MBE system just prior to the growth of the multilayer photo-gate. The structure and the location of these surface states is shown in Fig. l.