The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
Disclosed is a novel design of quartz manifold for the LPCVD reactor tube to minimize gas depletion, improve wafer uniformity, increase wafer throughput and, most important, uniform film properties.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
86% of the total text.
Page 1 of 2
Enhanced Conventional LPCVD Reactor With Vertical Dispersed Source
Disclosed is a novel design of quartz manifold for the LPCVD reactor tube to
minimize gas depletion, improve wafer uniformity, increase wafer throughput and,
most important, uniform film properties.
It is well known that gas depletion down the length of the LPCVD furnace
tube is normally seen, and it can be compensated by increasing the furnace
temperature towards the end of the tube. The temperature difference can be as
much as 100oC. This temperature variation causes the change of both physical
and electrical film properties. It is proposed that the above problems can be
eliminated by inserting a gas exhaust manifold on the top of the tube (see the
cross section view of Fig. 1; Fig. 2 shows a side view). The reactant gases come
in from two manifolds on the bottom of the tube and flow radially between wafers,
then exhaust out through the manifolds on the top of the tube. This offers the
following advantages: 1.It greatly eliminates the gas depletion effect and reduces
the usage of gases. 2. Since there is no temperature gradient along the length
of the tube, it is expected that the entire tube can be utilized for film deposition;
therefore, wafer throughput is increased. Most important, the film properties
remain the same along the whole furnace.
3.Since the distance between the input and output of gases is slightly larger than
the diameter of the wafers, the temperature across ea...