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Enhanced Conventional LPCVD Reactor With Vertical Dispersed Source

IP.com Disclosure Number: IPCOM000035161D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Blum, JM Chan, KK [+details]

Abstract

Disclosed is a novel design of quartz manifold for the LPCVD reactor tube to minimize gas depletion, improve wafer uniformity, increase wafer throughput and, most important, uniform film properties.