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Low Temperature Shallow Trench Device Isolation of Semiconductor Material

IP.com Disclosure Number: IPCOM000035277D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Bronner, G Lu, NC [+details]

Abstract

A technique is described whereby ion implanted polysilicon is used as an insulator to provide low-temperature shallow-trench isolation of silicon devices used in the manufacture of integrated circuits. Ion implantation is used, instead of a long thermal process, to create extremely small isolation regions to provide insulation. By eliminating the high temperature process requirement to provide isolation, smaller device spacing is attainable, thereby minimizing the ultimate size of integrated circuits.