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Silylation Method to Enhance the Contrast of Reactive Ion Etched Images

IP.com Disclosure Number: IPCOM000035286D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Bruce, JA Linde, HG [+details]

Abstract

A resist silylation method is described which allows high contrast dry develop imaging in thin positive or negative photoresist layers.