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Fast Write Circuit for a Complementary Metal Oxide Silicon Static Latch

IP.com Disclosure Number: IPCOM000035296D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Drake, CE Fifield, JA [+details]

Abstract

By using N-channel pull-up devices to differentially write into a complementary metal oxide silicon (CMOS) static latch, fast writing speed is achieved.