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In-Situ Resist Hardening for Anisotropic Etching in High Pressure Plasma Reactors

IP.com Disclosure Number: IPCOM000035318D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Holland, S [+details]

Abstract

By adding certain agents to a reactive ion etch gas in a high pressure (300 to 500 mtorr) single wafer plasma reactor, etch barriers are formed when silicon combines with the sidewall material, allowing the photo image to be dry transferred from a relatively thin photoresist layer into a much thicker underlying layer.