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FABRICATING A SINGLE-CRYSTAL Si FILM ON AN INSULATOR

IP.com Disclosure Number: IPCOM000035320D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Euen, W Hagman, D [+details]

Abstract

A polysilicon film on an insulator with seed windows in the latter in suitable places is amorphized by Si+ implantation through the entire thickness of the polysilicon film and to a depth exceeding 10 nm in the underlying single-crystal silicon (100) in places of the seed windows in the insulator.