Semiconductor Isolation Structure and Process Using Epitaxy Overgrowth
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28
A technique is described whereby a semiconductor isolation structure and process provides device isolation space smaller than the minimum lithography feature size. By using lateral epitaxy overgrowth, a reversed "T" shape is achieved, requiring shorter temperature cycles and no extra mask steps when compared to previous processes.