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Planar Multilevel Structure Using Polyimide As Interlevel Insulator

IP.com Disclosure Number: IPCOM000035406D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Schwartz, GC [+details]

Abstract

A process has been developed which uses polyimide (PI) as an interlevel insulator when constructing structures for semiconductor devices. The procedure alleviates the attack of the lower layer of PI which may otherwise occur during reactive ion etch (RIE) when forming the stencil for the next metal layer.