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Platinum Arsenide Resistor Fabrication

IP.com Disclosure Number: IPCOM000035701D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Camp, WO Genova, VJ [+details]

Abstract

Low ohmic contact to platinum arsenide resistors is achieved by additional deposition of titanium, platinum and gold at contact areas and stable resistance values are obtained by close control of platinum thickness and heat treatment.