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Short-Channel Field-Effect Transistor

IP.com Disclosure Number: IPCOM000035718D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue


Related People

Brodsky, MH Fang, FF Gallagher, WJ Kleinsasser, AW Raider, SI [+details]


A short-channel field-effect transistor is fabricated using a bevelled four-layer alternate metal and insulator sandwich with the source and drain, the alternate metal layers and the gate positioned on the bevel. The structure is shown in the figure.