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Low Source Resistance Modulation Doped Field-Effect Transistor Device

IP.com Disclosure Number: IPCOM000035720D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Nathan, MI [+details]

Abstract

A reduced series resistance modulation doped field-effect transistor (MODFET) structure is provided with two channels of 2D electron gases, both in parallel. This reduces the series resistance by at least a factor of two. The layered structure is described in Fig. 1. It is fabricated by growth by normal molecular beam epitaxy (MBE).