Browse Prior Art Database

Junctions With Regrown Amphoteric Dopants

IP.com Disclosure Number: IPCOM000035726D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Baratte, H Marks, RF Wright, SL [+details]

Abstract

Easily scalable, planar structures with little lateral diffusion and low access resistances can be fabricated by epitaxially growing junctions and heterojunctions with an amphoteric dopant, such as silicon or germanium.