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Junctions With Regrown Amphoteric Dopants Disclosure Number: IPCOM000035726D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

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Baratte, H Marks, RF Wright, SL [+details]


Easily scalable, planar structures with little lateral diffusion and low access resistances can be fabricated by epitaxially growing junctions and heterojunctions with an amphoteric dopant, such as silicon or germanium.