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Selectively Doped Complementary Transistor Heterostructure Disclosure Number: IPCOM000035733D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

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Heiblum, M Nathan, MI [+details]


The fabrication of complementary transistor structures having a p and an n channel device connected with one as the load for the other may be improved by overcoming the difference in mobilities of electrons and holes at different temperatures through the use of electron and hole gases in one composite structure.