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Doping of III-V Compounds by Channeled Implants and Its Applications

IP.com Disclosure Number: IPCOM000035737D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Baratte, H Moore, JS Sadana, K [+details]

Abstract

Low electrical activation (10-50%) of dopants implanted randomly into III-V compound semiconductors at doses > 1E13 cm-2 is a common phenomenon. This is partly due to the high amount of disorder that ions implanted along a random direction create in the substrate which cannot be fully removed even after subsequent annealing. In order to circumvent the above problem implantation along a channel direction may be desirable. Furthermore, the range of ions for a given energy is three to four times larger when implantation is conducted along a channel direction than that in a random direction. Thus, a 100 keV random implant could be replaced by a 30-40 keV channel implant.