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Modelling Three-Dimensional Multi-Layer Etching

IP.com Disclosure Number: IPCOM000035746D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue


Related People

Evans, RC Koppelman, GM O'Connor, MA [+details]


Disclosed is a method for simulating multilayer, unidirectional, rate- dependent etching in a three-dimensional polyhedral model of a semiconductor device. Because different layers will etch at different rates for the same etchant, variations in the etch-front appear locally across the device as the etch progresses in time.