Browse Prior Art Database

Precision Integrated Bandgap BIAS Cell With High Psrr

IP.com Disclosure Number: IPCOM000035785D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Buchholtz, TC Richetta, RA Schmerbeck, TJ [+details]

Abstract

A general-purpose bias cell is here used on analog/digital BIFET standard cells and master image designs. Its novel circuit design implementation provides a high precision (2.3 V +/- 3%), temperature compensated (<50 ppm/degrees C) on- or off-chip reference voltage, a temperature compensated reference current, and temperature compensated, accurate bias voltages for NFET, PFET, and NPN current sources. The novel design implementation provides for a high power supply rejection ratio of typically 80 dB at low frequencies.