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Lightly Doped Drain Structure With Reduced Series Resistance to Device Channel

IP.com Disclosure Number: IPCOM000035873D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
El-Kareh, B Roberts, S [+details]

Abstract

By means of a dual salicide process, electrical resistance between a source or drain contact and the device channel of a lightly doped drain (LDD) device is reduced, thereby improving device performance.