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High-Performance Vertical Npn With Soi Lateral Pnp Disclosure Number: IPCOM000035898D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

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Li, GP Ning, TH Sun, YC [+details]


Disclosed is a novel approach for integrating a high-performance lateral pnp with a high-performance "double-poly" vertical npn for complementary bipolar circuit applications. The high-performance lateral pnp device is achieved through a buried oxide layer underneath the lateral pnp to reduce parasitic capacitance and base charge storage.