The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
Disclosed is an approach for obtaining high Ge content SiGe layers on Si which are commensurate at thicknesses beyond the critical limit for such growth.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
100% of the total text.
Page 1 of 2
METHOD FOR GROWING HIGH Ge CONTENT COMMENSURATE LAYERS
Disclosed is an approach for obtaining high Ge content SiGe layers on Si
which are commensurate at thicknesses beyond the critical limit for such growth.
Commensurate Si-Ge layers have many potential applications in novel device
structures. Some of these applications require a high Ge concentration.
Unfortunately, the high misfit and interfacial energy associated with layers of high
Ge content limits the thickness of such layers. For example, a 50% Ge layer
may only be grown to a thickness of less than 7 nm. This is inadequate for
In this disclosure, an approach is described for obtaining commensurate
SiGe layers beyond critical thickness limits. To obtain such a layer, a low
concentration (about 15% Ge) commensurate Si-Ge layer is grown using low
temperature epitaxial techniques (i.e., molecular beam epitaxy). This layer is
subsequently oxidized (i.e., 800oC, steam), either with or without an oxide cap.
The oxidation treatment leads to the selective formation of SiO2 and an
interfacial enrichment of Ge, well above that permitted by theory. The RBS
profile of Fig. 1 shows the Ge enrichment at the interface, while the XTEM
micrograph of Fig. 2 shows the perfection of one such layer containing more than
70% Ge. The amount of enrichment may be controlled by the extent of oxidation.
Page 2 of 2
[This page contains 4 pictures or other non-text objects]