Browse Prior Art Database

METHOD FOR GROWING HIGH Ge CONTENT COMMENSURATE LAYERS ON Si

IP.com Disclosure Number: IPCOM000035900D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Ganin, E Iyer, SS Patton, GL [+details]

Abstract

Disclosed is an approach for obtaining high Ge content SiGe layers on Si which are commensurate at thicknesses beyond the critical limit for such growth.