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Modulation-Doped Superlattice Base Heterojunction Bipolar Transistor (Modhbt) Disclosure Number: IPCOM000035921D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

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Patton, GL Sai-Halasz, GA Stork, JM [+details]


Disclosed is an approach for obtaining a simultaneous enhancement of the vertical and horizontal transport of minority and majority carriers, respectively, in the base region of a bipolar transistor by tailoring of bandgap, doping, and lattice constant. (Image Omitted)