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Browse Prior Art Database

Method for Making Self-Aligned, Reverse-T Gate LDD Mosfet

IP.com Disclosure Number: IPCOM000035931D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Hsu, CH Wen, DS [+details]

Abstract

Disclosed is a fabrication method for making a reverse-T gate LDD structure by a self-aligned technique.