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Use of Plasma Modification to Increase Polymer Adhesion to Oxygen Etch Barriers Disclosure Number: IPCOM000035956D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

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Related People

Anderson, HR Buchwalter, PL Bumble, B Cuomo, JJ Yee, DS [+details]


In thin film redistribution (TFR) and similar operations polymer adhesion to oxygen etch barriers is poor. An annealing process has been invented which increases polyimide (PI) T-O adhesion by 500% as compared to PMDA-ODA (pyromalidic dianhydride-octyldecyl amine) adhesion to the virgin hexamethyldisilazane [HMDS(N)] surface. The development involves annealing the HMDS(N) film at 400oC/2 hrs. in air and treating that surface with argon (Ar) and ammonia (NH3) plasmas using a molybdenum (Mo) plate-covered cathode.