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Nanostructures With Optical Lithography and Double Silylation

IP.com Disclosure Number: IPCOM000036016D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Brady, MJ Davidson, A Shaw, JM Palevski, A [+details]

Abstract

At the present time there is a lot of interest in the fabrication of structures with sub-micron dimensions generated by increasing demands for higher density and switching speeds. This in turn has stimulated studies of the electrical and physical properties of ultrasmall structures. The structures of interest usually require multiply connected lines with dimensions in the sub-micron range of 50 to 200 nm, and require electron or X-ray lithography, since these dimensions are beyond the resolution of conventional optical lithography. This requires many steps and is a cost-intensive technique.