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Double Insulator Via Etch Process

IP.com Disclosure Number: IPCOM000036069D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Hoerner, E Koblinger, O [+details]

Abstract

The use of a nitride layer as an auxiliary layer, overlying a polyimide layer, in conjunction with a specific etch sequence by a single mask process considerably simplifies and improves the generation of contact holes in a nitride/polyimide double-layer insulation. (Image Omitted)