Browse Prior Art Database

Method of Characterizing Chemical Vapor Deposited Silicon Nitride Layers on Silicon Wafers

IP.com Disclosure Number: IPCOM000036105D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Faix, F Kaercher, R Przybisch, G Mueller, K [+details]

Abstract

For very large-scale integration, thin, high-quality oxide and nitride layers (< 100 o) are very important. Nitride layers are used in oxidation and diffusion masks as well as, in the form of a composite dielectric layer with SiO2, in MNOS structures. The completeness and homogeneity of the Si3N4 layer are tested by exposure to oxidizing conditions. In areas where there is no Si3N4 or where it is very thin, the oxide growth rate is noticeably increased.