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Novel method of creating alignment marks with 193nm lithography

IP.com Disclosure Number: IPCOM000036115D
Publication Date: 2005-Jan-28

Publishing Venue

The IP.com Prior Art Database

Abstract

DUV or I-line lithography were used to create alignment marks in the past. However, critical layers are moved to ArF lithography for improved resolution and alignment. To take advantage of single machine overlay, it is beneficial to use ArF lithography to create alignment marks. This publication describe the method of creating alignment marks using ArF lithography with tri-layer scheme. This method can be used to create golden wafers for ArF scanners also.