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Dielectric Spacer Formation to Eliminate Polysilicon Stringers

IP.com Disclosure Number: IPCOM000036134D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Breiten, C Brickey, L Houston, G Stanasolovich, D Theisen, J [+details]

Abstract

To improve circuit density and conserve horizontal device area multiple polysilicon wiring levels are employed. A major problem in polysilicon wiring is the formation of polysilicon stringers.