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Method for Reducing the Diffusion Contact Borders Disclosure Number: IPCOM000036202D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

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Stanasolovich, D Theisen, JF [+details]


Conventional process technologies require that a border be placed around all diffusion contacts to prevent shorting between polysilicon and interconnecting metallurgy. The use of borders around the diffusion contacts consumes a great deal of chip area and prevents further increases in circuit density. This problem with the existing process technology is shown in Fig. 1.