Method for Reducing the Diffusion Contact Borders
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28
Conventional process technologies require that a border be placed around all diffusion contacts to prevent shorting between polysilicon and interconnecting metallurgy. The use of borders around the diffusion contacts consumes a great deal of chip area and prevents further increases in circuit density. This problem with the existing process technology is shown in Fig. 1.