Three-Dimensional Semiconductor Device Structures Using Channelled Ion Implantation and Annealing Techniques
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28
A technique is described whereby three-dimensional semiconductor device structures are produced using channelled ion implantation and annealing methods. The concept concentrates on producing a very shallow conducting layer with an abrupt boundary, for improved MESFET and other semiconductor devices, and simultaneously buries conducting or insulating layers.