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Novel Selectively Doped High Current THETA Device

IP.com Disclosure Number: IPCOM000036210D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Seo, K [+details]

Abstract

Disclosed is a method to selectively dope the base of a hot electron device. Since a very thin base is necessary in order to achieve a high gain ballistic hot electron device, most devices suffer from a high base resistance that degrades their speed performance. It was previously proposed to generate a quasi two-dimensional electron gas (2DEG) in the base, and avoid doping it with impurities, by doping the collector barrier (AlGaAs) with donors, which will supply the electrons for 2DEG [*]. Due to the high mobility of the electrons in 2DEG, the base resistance is expected to be low enough for device applications. Attempts to do this failed since the barrier became very leaky after the introduction of impurities in it.