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Method for Making a Dynamic Random-Access Memory Cell

IP.com Disclosure Number: IPCOM000036222D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Beilstein, KE Bertin, CL White, FR Pressetto, JR [+details]

Abstract

By using a silicon-on-oxide (SOI) process, a borderless shared contact and borderless trench to storage node strap are made possible. A dynamic random-access memory (DRAM) cell is constructed in dimensions below normal limits of the photo process.