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Silicon-Rich "Haze" Elimination on Wafers by Wafer/Boat Modifications

IP.com Disclosure Number: IPCOM000036230D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
Bassett, EE Courchaine, RJ Puttlitz, AF [+details]

Abstract

When certain PECVD systems are utilized to deposit silicon nitride insulator material on wafers, a streak of silicon-rich silicon nitride "haze" (spots 5 mm ---> 8 mm in diameter) typically occurs across the face of a wafer. This "haze" cannot be seen with the unaided naked eye, but is easily seen with a bright light. An increase in pin hole density due to the "haze" can result in ionic passivation defects. Also, for double level metal FET and CMOS chip designs which have substantial nitride only passivation, an increase in pin hole density can result in shorts between metal levels.