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Bicmos Technology Using Selective Epitaxy Disclosure Number: IPCOM000036236D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

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El-Kareh, B Puttlitz, AF [+details]


A unique process sequence is outlined that uses selective epitaxy to define the region where a high performance bipolar device can be formed in a base CMOS technology.