Browse Prior Art Database

Bicmos Technology Using Selective Epitaxy

IP.com Disclosure Number: IPCOM000036236D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

Publishing Venue

IBM

Related People

Authors:
El-Kareh, B Puttlitz, AF [+details]

Abstract

A unique process sequence is outlined that uses selective epitaxy to define the region where a high performance bipolar device can be formed in a base CMOS technology.