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Photoconductive Optical Detection Scheme for Integrated Optic Applications Disclosure Number: IPCOM000036260D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28

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May, P [+details]


By making use of a photoconductive resonant transmission line structure, a monolithic photodetector compatible with advanced silicon bipolar technology is described which has a responsivity equivalent to p-i-n diode structures. A novel demultiplexing technique that utilizes this method is also described.