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Owing to its characteristic fine correction mode, electron-beam proximity printing (EBP) lithography permits the production of defined photoresist edge profiles by a number of staggered single scans.
English (United States)
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Method of Producing Defined Edge Profiles in Photoresist by Electron
Beam Proximity Printing Lithography
Owing to its characteristic fine correction mode, electron-beam proximity
printing (EBP) lithography permits the production of defined photoresist edge
profiles by a number of staggered single scans.
The production of semiconductor devices in present technology and of future
I2L circuits makes maximum demands on lithography, process technology and
their combination. Some coating processes require highly defined photoresist
profiles, as deviations may lead to enormous yield losses during the production
process. Frequently, resist reflow processes fail to produce the desired
By means of EBP lithography, resist profiles as are required for different
process technologies may be produced as early as in the lithographic step. The
basis of the described method is the "step and intelligent scan" exposure mode
of the EBP which cannot be realized in optical or X-ray lithography. In EBP
lithography, a 1x membrane mask is exposed by shadow casting on the wafer,
with projection not being effected by floodlight but by raster scanning using a
parallel electron beam of about 1 mm diameter. Fine correction coils permit
adjusting the beam inclinations to compensate for table errors or mask
By suitably selecting the power and scanning conditions, full chip exposure
may be carried out in a number of successive single scans rather than in one