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Spacer-Defined Strap Disclosure Number: IPCOM000036395D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-29

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Kenney, DM [+details]


In the construction of dynamic random-access memory cells, a single silicon strap-connecting region is etched to form two strap connections serving two separate trenches. The region to be etched is defined by self-aligning techniques, thus reducing area required to make two-device structures.