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Method for Making Bipolar Devices Within a Standard Complementary Metal Oxide Silicon Process

IP.com Disclosure Number: IPCOM000036449D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-29

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El-Kareh, B Puttlitz, AF [+details]


By adding three photo-masking steps to a complementary metal oxide silicon (CMOS) process, bipolar and field-effect devices of either polarity may be included in integrated circuits made by this BiCMOS process.