Browse Prior Art Database

Method for Controlling the Crystalline Phase of Tantalum Disclosure Number: IPCOM000036465D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue


Related People

Fryer, PM [+details]


Disclosed is a process for controlling the crystalline phase of tantalum metal. Film thickness and substrate temperature are used to form the low resistivity alpha phase or the high resistivity beta phase.