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Method for Controlling the Crystalline Phase of Tantalum

IP.com Disclosure Number: IPCOM000036465D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Fryer, PM [+details]

Abstract

Disclosed is a process for controlling the crystalline phase of tantalum metal. Film thickness and substrate temperature are used to form the low resistivity alpha phase or the high resistivity beta phase.