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Soft Vacuum Pulsed Electron Beam Processing of TEFLON Films

IP.com Disclosure Number: IPCOM000036466D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Collins, GJ Hiraoka, H Krishnaswamy, J [+details]

Abstract

Poly(tetrafluoroethylene), TEFLON*, is an excellent engineering material with a low dielectric constant, chemical inertness in hazardous environments, and thermal stability. However, it has many shortcomings such as poor adhesion to substrates, difficulty in micron-sized via hole fabrication, almost zero solubility in common solvents, and others. There are ways to improve its poor adhesion by treating TEFLON films with certain chemicals, or by simultaneous deposition of metal substrates while exposing TEFLON surfaces to argon ions. Thin NAFION* film with TEFLON backbones may be used as an intermediate layer. For microcircuit engineering purposes, a technique for micron-sized image fabrication is still required.