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Method for Making Lightly Doped Drain Shallow Junctions

IP.com Disclosure Number: IPCOM000036490D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Pan, P [+details]

Abstract

By using a removable tungsten edge spacer, an L-shaped oxide film is formed to define the position of heavily doped and lightly doped drain regions without photo-masking.