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By using a removable tungsten edge spacer, an L-shaped oxide film is formed to define the position of heavily doped and lightly doped drain regions without photo-masking.
English (United States)
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Method for Making Lightly Doped Drain Shallow Junctions
By using a removable tungsten edge spacer, an L-shaped oxide film is
formed to define the position of heavily doped and lightly doped drain regions
Referring to Fig. 1, standard processing is used to form gate oxide (SiO2) 2
on silicon substrate 4 and overlying gate conductor 6 with cap silicon nitride
(Si3N4) layer 8. Conformal layers of SiO2 10 and tungsten (W) 12 are then
The cross section (Fig. 2) is the result of the anisotropic etching of the W
layer 12 at least until the SiO2 layer 10 is completely exposed in flat horizontal
areas, and then anisotropically etching away the SiO2 layer 10 in those areas.
Referring to Fig. 3, standard processing is next used to form cobalt disilicide
(CoSi2) source and drain contacts 14. The remaining W 12 is then selectively
etched away. Ion implantation and annealing are used to form lightly doped
regions 18 and heavily doped regions 20. The devices are completed by
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