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Simple Method of Reducing Parasitic Pad Capacitance in Ridge Lasers Disclosure Number: IPCOM000036539D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

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Deutsch, U Harder, CS Webb, DJ [+details]


The area of bonding pads of typical semiconductor lasers is large compared with the active area of the laser. The parasitic capacitance of these pads is in parallel with the laser and limits its high frequency response. Proposed is a way of reducing this parasitic capacitance by placing the bonding pads on a thick, insulating spacer of low dielectric constant. The described method is compatible with a photoresist-based ridge-etch procedure which allows the contact openings in the insulator to be self-aligned to the ridges.