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Dislocations are often generated at the vicinity of polysilicon-filled trenches. The analysis of these dislocations, because of their small density, requires fast and accurate localization.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
98% of the total text.
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Monitoring Structure for Trench Dislocations
Dislocations are often generated at the vicinity of polysilicon-filled trenches.
The analysis of these dislocations, because of their small density, requires fast
and accurate localization.
In a standard process sequence, a large number of transistors are
interconnected with metallurgy for electrical probing and defect detection.
A process sequence involving polysilicon deposition that allows
interconnection of trench-isolated pedestals is described hereafter. An electrical
testing of the subcollector-to-base junction with the polysilicon contacts allows
early defect detection and analysis.
According to this process sequence, polybase contacts are opened after
trench formation and filling. Then the polysilicon is deposited, oxidized and ion
implanted. Ion implantation is followed by a drive-in. A special test structure
mask is used to generate stripes of polysilicon ending in testing pads. The oxide
is then etched off in a plasma etcher. The structure is then ready for electrical
The breakdown voltage between the polysilicon filled trenches and polysilicon
base is measured for leakages. Furthermore, the polybase stripe pattern allows
for cutting the stripes in order to localize the defects to permit failure analysis.
The main advantage of this polysilicon wiring of a test structure to detect
junction leakage is a significant reduction of time between trench formation and
test. As a result, quicker evaluation o...