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Monitoring Structure for Trench Dislocations

IP.com Disclosure Number: IPCOM000036593D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Plougonven, C [+details]

Abstract

Dislocations are often generated at the vicinity of polysilicon-filled trenches. The analysis of these dislocations, because of their small density, requires fast and accurate localization.