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Two-Port Memory Cell With Transistor Couplings

IP.com Disclosure Number: IPCOM000036699D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Wong, RC [+details]

Abstract

In conventional memory cells, read-write couplings are accomplished with either SBDs or extra emitters. Examples are the CTS cells and the HARPNP cells. Cells with SBD couplings exhibit very long write times and require very large SBDs. In the case of emitter couplings, access currents have to be very large to overcome the bit line leakage currents from half-selected cells. Thus read access for broad data widths is difficult. This also causes long write times under worst- case conditions.