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Field-Emission Triode Integrated-Circuit Construction Method Disclosure Number: IPCOM000036729D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

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Cronin, JE Morrett, K Potter, M [+details]


Microelectronic device-processing steps are selectively combined to make integrated circuits comprised of field-emission triodes for the active devices instead of semiconductor devices. Sharp, field-emission tips are formed which are self-aligned to a control grid by this process.